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Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays

By: Smith, G.M.; Donnelly, J.P.; Ray, K.G.; Oakley, D.C.; Chapman, D.C.; O'Donnell, F.J.; Molvar, K.M.; Mahoney, L.J.; Kumar, N.R.; Funk, J.E.; Verghese, S.; Shaver, D.C.; Duerr, E.K.; Mcintosh, K.A.;

2007 / IEEE / 978-1-4244-0924-2

Description

This item was taken from the IEEE Conference ' Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays ' The fabrication of reliable InP-based Geiger-mode avalanche photodiodes are described. Devices passivated with polyimide coated with silicon nitride have not degraded even while aging under more strenuous conditions than those used in fielded systems.