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Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays
By: Smith, G.M.; Donnelly, J.P.; Ray, K.G.; Oakley, D.C.; Chapman, D.C.; O'Donnell, F.J.; Molvar, K.M.; Mahoney, L.J.; Kumar, N.R.; Funk, J.E.; Verghese, S.; Shaver, D.C.; Duerr, E.K.; Mcintosh, K.A.;
2007 / IEEE / 978-1-4244-0924-2
This item was taken from the IEEE Conference ' Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays ' The fabrication of reliable InP-based Geiger-mode avalanche photodiodes are described. Devices passivated with polyimide coated with silicon nitride have not degraded even while aging under more strenuous conditions than those used in fielded systems.
Photonic Band Gap
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Reliable Mesa-etched Inp-based Geiger-mode Avalanche Photodiodes