A Nanowire Transistor for High Performance Logic and Terabit Non-Volatile Memory Devices

Description

This item was taken from the IEEE Conference ' A Nanowire Transistor for High Performance Logic and Terabit Non-Volatile Memory Devices ' A silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is reported for the first time. N- and P-channel SiNAWI-FET showed the highest driving current on (110)/j110k crystal orientation without device rotation, whereas most 3-dimensional NMOS report higher driving current on 45° device rotation rather than 0°. Utilizing an 7nm spherical nanowire on the 8nm SiNAWI-NVM with ONO structure, 1.7V VT-window was achieved from 12V/80¿sec program conditions with retention enhancement.