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Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy
By: Chan, K.; Lavoie, C.; Dyer, T.; Byeong Kim; Chakravarti, A.; Ozcan, A.; Madan, A.; Jinghong Li; Gluschenkov, O.; Yaocheng Liu; Ken Rim; Henson, W.; Loesing, R.; Zhijiong Luo; Rovedo, N.; Pinto, T.; Popova, I.;
2007 / IEEE / 978-4-900784-03-1
This item was taken from the IEEE Conference ' Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy ' Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.
Mobility And Solid Phase Epitaxy
Uniaxial Tensile Stress
Solid Phase Epitaxy
Cmos Integrated Circuits
Solid Phase Epitaxial Growth