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Influence of Pulsed Electromagnetic Fields Upon Integral Memory Microcircuit
By: Borisov, A.A.; Gribski, M.P.; Ahramovich, L.N.; Petrov, A.M.; Grigoriev, E.V.; Churyumov, G.I.; Starostenko, V.V.; Zuev, S.A.;
2006 / IEEE / 966-322-006-6
This item was taken from the IEEE Conference ' Influence of Pulsed Electromagnetic Fields Upon Integral Memory Microcircuit ' The experimental study method of the direct influence by pulsed electromagnetic fields on modern microcircuits of the memories is described. The field values, under which the malfunction in the microcircuits working and degradation phenomena in microstructures element of the crystal and discharge of the microcircuits begin, are obtained.