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Characterization of micro-bump C4 interconnects for Si-carrier SOP applications
By: Andry, P.S.; Horton, R.; Buchwalter, L.P.; Gan, H.; Polastre, R.; Wright, S.L.; Sprogis, E.; Sharma, A.; Lloyd, J.R.; Sri-Jayantha, M.S.; Knickerbocker, J.; Tsang, C.; Patel, C.;
2006 / IEEE / 1-4244-0152-6
Description
This item was taken from the IEEE Conference ' Characterization of micro-bump C4 interconnects for Si-carrier SOP applications ' This paper describes yield, contact resistance, and preliminary reliability test results on micro-bump C4 interconnects in modules containing Si-chips and Si-carriers. Modules containing eutectic PbSn or SnCu bump solders were fabricated with high yield, with similar interconnect contact resistances for both solders. The contact resistance and reliability test results to date suggest that reliable, high-current, high-density bump interconnections can be achieved for Si-carrier technology.
Related Topics
Reliability Test
Si-chips
Eutectic Pbsn Solders
Eutectic Sncu Bump Solders
Interconnect Contact Resistances
High-density Bump Interconnections
Si-carrier Technology
Si
Pbsn
Wiring
Silicon
Resists
Contact Resistance
Power System Interconnection
Ceramics
Packaging
Gallium Nitride
Rivers
System Testing
Si-carrier Sop
Microbump C4 Interconnects
Sncu
System-in-package
Silicon
Lead Alloys
Integrated Circuit Yield
Integrated Circuit Reliability
Integrated Circuit Interconnections
Eutectic Alloys
Copper Alloys
Contact Resistance
Tin Alloys
Engineering
Solders
