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Characterization of micro-bump C4 interconnects for Si-carrier SOP applications

By: Andry, P.S.; Horton, R.; Buchwalter, L.P.; Gan, H.; Polastre, R.; Wright, S.L.; Sprogis, E.; Sharma, A.; Lloyd, J.R.; Sri-Jayantha, M.S.; Knickerbocker, J.; Tsang, C.; Patel, C.;

2006 / IEEE / 1-4244-0152-6

Description

This item was taken from the IEEE Conference ' Characterization of micro-bump C4 interconnects for Si-carrier SOP applications ' This paper describes yield, contact resistance, and preliminary reliability test results on micro-bump C4 interconnects in modules containing Si-chips and Si-carriers. Modules containing eutectic PbSn or SnCu bump solders were fabricated with high yield, with similar interconnect contact resistances for both solders. The contact resistance and reliability test results to date suggest that reliable, high-current, high-density bump interconnections can be achieved for Si-carrier technology.