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High frequency mismatch characterization on 170GHz HBT NPN bipolar device

By: Danaie, S.; Gloria, D.; Perrotin, A.; Laurens, M.; Pourchon, F.;

2006 / IEEE / 1-4244-0167-4

Description

This item was taken from the IEEE Conference ' High frequency mismatch characterization on 170GHz HBT NPN bipolar device ' This paper describes a high frequency mismatch approach on BJT able to reach Ft=170GHz. All obtained results are complementary and all well linked with the mismatch extract from DC measurement and in good agreement with the model parameters. In order to extract these results, a new test structure and associated parameter extraction tool have been developed.