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Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization

By: Zhiguo Meng; Man Wong; Dongli Zhang;

2005 / IEEE / 0-7803-9217-5

Description

This item was taken from the IEEE Conference ' Time-reduced and large-area polycrystalline silicon thin-film transistor technology based on metal-induced crystallization ' Techniques of forming polycrystalline silicon (poly-Si) using peripherally crystallized poly-Si (PCP) and solution-based large-area crystallization (LAC) are reported. Though these processes offer advantages of reduced mask-count and reduced/eliminated pattern distortion resulting from glass-shrinkage, the resulting thin-film transistor (TFT) performance is comparatively degraded.