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Quantum simulation of nano-scale Schottky barrier MOSFETs
By: Moongyu Jang; Mincheol Shin; Seonjae Lee;
2004 / IEEE / 0-7803-8536-5
This item was taken from the IEEE Conference ' Quantum simulation of nano-scale Schottky barrier MOSFETs ' In this paper, SB-MOSFETs are investigated by solving the 2D Poisson equation self-consistently with the Schrodinger equation. The charge distributions were compared in the classical and quantum cases and the dependence of the channel threshold voltages on channel length and doping concentration were investigated. Schrodinger equations were solved self-consistently. The boundary conditions used in solving the Schrodinger equations were such that wave functions vanishes at the oxide-silicon interface and at z=D, where D is the depth of the simulated device.
Semiconductor Device Models
Nanoscale Schottky Barrier Mosfet
2d Poisson Equation
Channel Threshold Voltages