Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Quantum simulation of nano-scale Schottky barrier MOSFETs

By: Moongyu Jang; Mincheol Shin; Seonjae Lee;

2004 / IEEE / 0-7803-8536-5

Description

This item was taken from the IEEE Conference ' Quantum simulation of nano-scale Schottky barrier MOSFETs ' In this paper, SB-MOSFETs are investigated by solving the 2D Poisson equation self-consistently with the Schrodinger equation. The charge distributions were compared in the classical and quantum cases and the dependence of the channel threshold voltages on channel length and doping concentration were investigated. Schrodinger equations were solved self-consistently. The boundary conditions used in solving the Schrodinger equations were such that wave functions vanishes at the oxide-silicon interface and at z=D, where D is the depth of the simulated device.