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50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers

By: Braun, A.M.; Martinelli, R.U.; Khalfin, V.; Li, J.; Willner, B.L.; Abeles, J.H.; Shellenbarger, Z.; Harvey, M.;

2004 / IEEE / 1-55752-777-6

Description

This item was taken from the IEEE Conference ' 50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers ' 50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.