Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.
50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers
By: Braun, A.M.; Martinelli, R.U.; Khalfin, V.; Li, J.; Willner, B.L.; Abeles, J.H.; Shellenbarger, Z.; Harvey, M.;
2004 / IEEE / 1-55752-777-6
Description
This item was taken from the IEEE Conference ' 50-W peak power AlGaAs/InGaAs/GaAs single quantum-well 990-nm diode lasers ' 50 W peak-power was demonstrated from 2-mm-long, 100-/spl mu/m-aperture AlGaAs/InGaAs/GaAs single-quantum-well lasers driven with 40-ns, 80-A current pulses. Grown by organo-metallic vapor-phase epitaxy, the lasers have internal losses of 1.5 cm/sup -1/ and internal efficiencies of 0.90.
Related Topics
Semiconductor Growth
Algaas-ingaas-gaas
Single Quantum-well Lasers
Diode Lasers
Organometallic Vapor-phase Epitaxy
Internal Losses
50 W
2 Mm
100 Mum
40 Ns
80 A
Indium Gallium Arsenide
Gallium Arsenide
Quantum Well Lasers
Diode Lasers
Optical Pulses
Waveguide Lasers
Space Vector Pulse Width Modulation
Optical Waveguides
Apertures
Power Generation
Vapour Phase Epitaxial Growth
High-speed Optical Techniques
Quantum Well Lasers
Iii-v Semiconductors
Indium Compounds
Gallium Arsenide
Aluminium Compounds
Optical Losses
Engineering
Algaas/ingaas/gaas Lasers
