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An accurate measurement and extraction method of gate to substrate overlap capacitance [MOSFETs]
By: Aoki, H.; Sano, T.; Kawahara, Y.; Shimasue, M.;
2004 / IEEE / 0-7803-8262-5
This item was taken from the IEEE Conference ' An accurate measurement and extraction method of gate to substrate overlap capacitance [MOSFETs] ' Gate-to-bulk overlap capacitance (CGBO) cannot be ignored for long gate channel MOSFETs that are used for various I/O and analog circuits. We present a simple and yet accurate CGBO measurement and extraction by using a group of MOSFETs. Dedicated test structures using 0.18 /spl mu/m shallow trench isolation technology were fabricated for the purpose. The effect of CGBO has been successfully analyzed by comparing the measured and simulated time period delay of ring oscillators.
Gate To Substrate Overlap Capacitance
Gate-to-bulk Overlap Capacitance
Mosfet Test Structures
Shallow Trench Isolation
Ring Oscillator Time Period Delay
Semiconductor Device Models
Semiconductor Device Measurement
Long Gate Channel Mosfet