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An accurate measurement and extraction method of gate to substrate overlap capacitance [MOSFETs]

By: Aoki, H.; Sano, T.; Kawahara, Y.; Shimasue, M.;

2004 / IEEE / 0-7803-8262-5

Description

This item was taken from the IEEE Conference ' An accurate measurement and extraction method of gate to substrate overlap capacitance [MOSFETs] ' Gate-to-bulk overlap capacitance (CGBO) cannot be ignored for long gate channel MOSFETs that are used for various I/O and analog circuits. We present a simple and yet accurate CGBO measurement and extraction by using a group of MOSFETs. Dedicated test structures using 0.18 /spl mu/m shallow trench isolation technology were fabricated for the purpose. The effect of CGBO has been successfully analyzed by comparing the measured and simulated time period delay of ring oscillators.