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Recent progress in devices and materials for CMOS technology

By: Wong, H.-S.P.; Shang, H.; Rim, K.; Ren, Z.; Kedzierski, J.; Jones, E.C.; Ieong, M.; Gusev, E.; Doris, B.;

2003 / IEEE / 0-7803-7765-6

Description

This item was taken from the IEEE Conference ' Recent progress in devices and materials for CMOS technology ' This paper reviews the recent progress in continuing CMOS scaling by introducing new device structures and new materials. Starting from an analysis of the sources of device performance improvements, we present technology options to achieving these performance enhancements. These options include high dielectric constant (high-k) gate dielectric, metal gate electrode, double-gate FET, strained silicon FET, and Ge FET.