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Raised S/D gate-all-around CMOS using MILC

By: Chan, V.W.C.; Chan, P.C.H.; Chunshan Yin;

2002 / IEEE / 0-7803-7439-8


This item was taken from the IEEE Conference ' Raised S/D gate-all-around CMOS using MILC ' The double gate or Gate-All-Around MOSFET is a promising candidate to further stretch the CMOS scaling roadmap In this paper we present our preliminary work of a new high performance Gate-All-Around transistors (GAT). The device is fabricated on a bulk silicon wafer, and it can also be fabricated on any substrate or on the top of any device layers The channel of this GAT is silicon film recrystallized from amorphous silicon, using technique known as Metal-Induced-Lateral-Crystallization.