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Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons

By: Gillberg, J.E.; Wheatley, C.F.; Burton, D.I.; Hubbard, N.; Titus, J.L.;

2002 / IEEE / 0-7803-7544-0

Description

This item was taken from the IEEE Conference ' Updated responses of devices from the FSG and FSP radiation-hardened power MOSFET families to 1-MeV equivalent neutrons ' This paper updates our 2001 workshop paper and provides neutron test results of six device types representing the Star Power Gold, FSG, and the Star Power, FSP, radiation-hardened power MOSFET families manufactured by Fairchild Semiconductor. Both the FSG and FSP families employ a stripe-cell topology with devices having rated drain breakdown voltages from 30 volts to 250 volts.