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100 mW external cavity laser with a 1405-1575 nm tuning range
By: Maiorov, M.; Kudryashov, I.; Morris, N.; Komissarav, A.; Connolly, J.; Alphonse, G.; Braun, A.; Khalfin, V.; Garbuzov, D.;
2002 / IEEE / 1-55752-706-7
This item was taken from the IEEE Conference ' 100 mW external cavity laser with a 1405-1575 nm tuning range ' InGaAsP-InP strained multiquantum well structures similar to those described ins were used for tilted ridge waveguide (TRWG) gain chip fabrication. Lateral mode confinement is provided by a dual-channel ridge waveguide structure prepared by conventional photolithography in conjunction with chemical etching.
Mw External Cavity Laser
Ingaasp-inp Strained Multiquantum Well Structure
Tilted Ridge Waveguide
Gain Chip Fabrication
Lateral Mode Confinement
Dual-channel Ridge Waveguide Structure
1405 To 1575 Nm
Semiconductor Optical Amplifiers
Laser Cavity Resonators
Quantum Well Lasers