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External cavity multiwavelength semiconductor laser

By: Berman, E.; Basiev, T.T.; Grimes, G.J.; Fedorov, V.V.; Mirov, S.B.; Moskalev, I.S.; Abeles, J.;

2002 / IEEE / 1-55752-706-7

Description

This item was taken from the IEEE Conference ' External cavity multiwavelength semiconductor laser ' We have demonstrated an external cavity multi-wavelength diode laser based on a novel spatially dispersive resonator scheme. Multi-wavelength oscillation has been achieved with a single broad-stripe diode laser operating at 660 nm and with a 1560 nm multi-stripe diode laser. One of the major advantages of our laser scheme is that it can be build on the basis of a single diode chip as well as a diode array or a multi striped diode.