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High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications
By: Menna, R.; Garbuzov, D.; Connolly, J.; Todorov, S.; Komissarov, A.; Tsekoun, A.; Khalfin, V.; Maiorov, M.;
2001 / IEEE / 0-7803-6705-7
Description
This item was taken from the IEEE Conference ' High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications ' High power 1310 nm InGaAsP/InP Fabry-Perot and single-frequency distributed-feedback (DFB) lasers with record output powers are reported. DFB chip power levels of 450 mW and ex-fiber power of 315 mW have been achieved for CW operation at 20/spl deg/C.
Related Topics
Laser Transitions
Ingaasp-inp
High Power
Single Spatial Mode
Single Longitudinal Mode
Cw Output Power
Telecommunication Applications
Fabry-perot Lasers
Single-frequency Distributed-feedback Lasers
Dfb Chip Power Levels
Ex-fiber Power
Multiple Quantum Well
450 Mw
1310 Nm
315 Mw
20 Degc
Indium Phosphide
Laser Modes
Power Lasers
Chemical Lasers
Quantum Well Lasers
Pump Lasers
Waveguide Lasers
Fabry-perot
Etching
Gratings
Quantum Well Lasers
Fabry-perot Resonators
Laser Modes
Distributed Feedback Lasers
Iii-v Semiconductors
Gallium Arsenide
Indium Compounds
Optical Communication Equipment
Engineering
Ingaasp/inp Lasers
