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High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications

By: Menna, R.; Garbuzov, D.; Connolly, J.; Todorov, S.; Komissarov, A.; Tsekoun, A.; Khalfin, V.; Maiorov, M.;

2001 / IEEE / 0-7803-6705-7

Description

This item was taken from the IEEE Conference ' High power single spatial and longitudinal mode 1310 nm InGaAsP/InP lasers with 450 mW CW output power for telecommunication applications ' High power 1310 nm InGaAsP/InP Fabry-Perot and single-frequency distributed-feedback (DFB) lasers with record output powers are reported. DFB chip power levels of 450 mW and ex-fiber power of 315 mW have been achieved for CW operation at 20/spl deg/C.