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Grain boundary controlled poly-Si TFT process employing selective si ion implantation and excimer laser annealing
By: Min-Koo Han; In-Hyuk Song; Min-Cheol Lee;
2001 / IEEE / 0-7803-7432-0
Description
This item was taken from the IEEE Conference ' Grain boundary controlled poly-Si TFT process employing selective si ion implantation and excimer laser annealing ' The authors report effects of selective Si/sup +/ ion implantation on the excimer laser annealing (ELA) of a-Si films. The Si/sup +/ ion implantation may change the melting temperature of a-Si during ELA. In our experiment, lateral grains near the implanted region were observed and they were gown up to 1 /spl mu/m while fine grains smaller than 1000 A were observed in the implanted region.
Related Topics
Thin Film Transistors
Ion Implantation
Laser Beam Annealing
Grain Growth
Leakage Currents
Si
Selective Ion Implantation
Excimer Laser Annealing
Thin Film Transistor
Tft
Grain Growth
Leakage Current
Grain Boundary
Process Control
Thin Film Transistors
Ion Implantation
Annealing
Semiconductor Films
Laser Transitions
Temperature
Optical Control
Grain Size
Grain Boundaries
Elemental Semiconductors
Silicon
Grain Boundaries
Engineering
Amorphous Semiconductor
