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Responses of radiation-hardened power MOSFETs to neutrons

By: Gillberg, J.E.; Hubbard, N.; Wheatley, C.F.; Titus, J.L.; Burton, D.I.;

2001 / IEEE / 0-7803-7199-2

Description

This item was taken from the IEEE Conference ' Responses of radiation-hardened power MOSFETs to neutrons ' The test results of recent neutron irradiations performed on a variety of radiation-hardened power MOSFETs manufactured by Fairchild Semiconductor are reported here. Twelve device types from four different families with rated drain breakdown voltages from 30 to 500 volts of which most are n-channels and the others are p-channels, were characterized.