Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.
Design analysis of thin-body silicide source/drain devices
By: Tsu-Jae King; Bokor, J.; Peiqi Xuan; MeiKei Ieong; Kedzierski, J.; Chenming Hu;
2001 / IEEE / 0-7803-6739-1
Description
This item was taken from the IEEE Conference ' Design analysis of thin-body silicide source/drain devices ' The use of complementary low-barrier silicides is investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two different thin-body device types are simulated, one in which the source/drain regions are formed by the silicide without doping, and another in which the silicide source/drains are terminated by a doped extension region.
Related Topics
Semiconductor Device Models
Si-sio/sub 2/
Design Analysis
Thin-body Silicide Source/drain Devices
Complementary Low-barrier Silicides
Series Resistance
Pmos
Nmos
Soi Devices
Source/drain Regions
Silicide
Doping
Silicide Source/drains
Doped Extension Region
Silicides
Mos Devices
Doping
Immune System
Tunneling
Schottky Barriers
Electric Resistance
Silicon On Insulator Technology
Silicon Devices
Contact Resistance
Mosfet
Silicon-on-insulator
Silicon Compounds
Elemental Semiconductors
Silicon
Semiconductor Doping
Engineering
Thin-body Silicon-on-insulator Devices
