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Design analysis of thin-body silicide source/drain devices

By: Tsu-Jae King; Bokor, J.; Peiqi Xuan; MeiKei Ieong; Kedzierski, J.; Chenming Hu;

2001 / IEEE / 0-7803-6739-1


This item was taken from the IEEE Conference ' Design analysis of thin-body silicide source/drain devices ' The use of complementary low-barrier silicides is investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two different thin-body device types are simulated, one in which the source/drain regions are formed by the silicide without doping, and another in which the silicide source/drains are terminated by a doped extension region.