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Beam incidence angle control advantages of high-current single wafer implanters

By: Todorov, S.; Evans, E.; Jeong, U.; Variam, N.; Bertuch, A.; Robertson, T.;

2000 / IEEE / 0-7803-6462-7

Description

This item was taken from the IEEE Conference ' Beam incidence angle control advantages of high-current single wafer implanters ' Ion beam incidence angle accuracy has become significantly more important in high current implantation, with the development of next generation device structures. The requirement for better ion beam control has lead to the development of single wafer high-current implanters and the methods by which to measure implant angle accuracy. This paper investigates the ion beam incidence angle accuracy of a single wafer implanter and compares its performance to representative data from batch process high-current tools.