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Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches
By: Thornton, R.L.; Zutavern, F.J.; Loubriel, G.M.; Mar, A.; Donaldson, R.D.; O'Malley, M.W.; Baca, A.G.; Hjalmarson, H.P.; Brown, D.J.; Helgeson, W.D.;
2000 / IEEE / 0-7803-5826-0
This item was taken from the IEEE Conference ' Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches ' The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100 A for a dopant diffusion depth of 4 /spl mu/m. This current could be increased by connecting and triggering parallel switches. The contact metal has a different damage mechanism and the threshold for damage (/spl sim/40 A) is not further improved beyond a dopant diffusion depth of about 2 /spl mu/m. In a diffusion-doped contact switch, the switching performance is not degraded at the onset of contact metal erosion, unlike a switch with conventional contacts. For fireset applications operating at a 1 kV/1 kA levels and higher, doped contacts have not yet resulted in improved longevity. The authors employ multi-filament operation and InPb solder/Au ribbon wirebonding to demonstrate >100 shot lifetime at 1 kV/1 kA.
Pulsed Power Switch
Filament Formation Suppression
Dopant Diffusion Depth
Gaas Photoconductive Semiconductor Switches
Pulsed Power Switches
Power Semiconductor Switches
Pulsed Power Supplies