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Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectification
2000 / IEEE / 0-7803-6269-1
This item was taken from the IEEE Conference ' Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectification ' An investigation is performed in this paper upon the impact of the parasitic bipolar junction transistor (BJT) with respect to the body-diode characteristics of the power MOSFET. Simulated and experimental results show that the forward conduction and the reverse recovery characteristics of the body-diode can be improved by enhancing the parasitic BJT, formed by the N/sup +/ source (emitter), P-well (base) and N-epi layer (collector) of power MOSFETs, Furthermore, the trade-off between enhancing the parasitic BJT and retaining the device's unclamped inductive switching (UIS) capability is also addressed.
Unclamped Inductive Switching
Reverse Recovery Characteristics
Power Semiconductor Switches
Dc-dc Power Converters
Power Bipolar Transistors
Power Semiconductor Diodes
High Efficiency Synchronous Rectification