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Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers

By: Donetsky, D.; Trussell, W.; Belenky, G.; Shterengas, L.; Maiorov, M.; Menna, R.; Garbuzov, D.; Connolly, J.;

2000 / IEEE / 0-7803-6320-5

Description

This item was taken from the IEEE Conference ' Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers ' High power 1.5-/spl mu/m InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-/spl mu/m InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 /spl mu/m aperture laser with a doped p-cladding/SCH interface.