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Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers
By: Donetsky, D.; Trussell, W.; Belenky, G.; Shterengas, L.; Maiorov, M.; Menna, R.; Garbuzov, D.; Connolly, J.;
2000 / IEEE / 0-7803-6320-5
Description
This item was taken from the IEEE Conference ' Effect of p-doping on the performance of high power 1.5-/spl mu/m InGaAsP MQW lasers ' High power 1.5-/spl mu/m InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-/spl mu/m InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 /spl mu/m aperture laser with a doped p-cladding/SCH interface.
Related Topics
Laser Beams
Optical Pulse Generation
Ingaasp-inp
P-doping
Performance
High Power Mqw Lasers
Ingaasp Mqw Lasers
Fabrication
Power Saturation
Modeling Results
Electron Heterobarrier Leakage
Output Power
Ingaasp/inp Lasers
Pulsed Output Power
Aperture Laser
Doped P-cladding/sch Interface
1.5 Mum
14 W
100 Mum
Ingaasp
Power Lasers
Optical Saturation
Semiconductor Lasers
Laser Modes
Optical Sensors
Power Generation
Optical Pulses
Stimulated Emission
Quantum Well Devices
Doping Profiles
Semiconductor Doping
Quantum Well Lasers
Iii-v Semiconductors
Optical Fabrication
Gallium Arsenide
Gallium Compounds
Indium Compounds
Claddings
Engineering
P-cladding Doping Profiles
