Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Physical basis for high power semiconductor nanosecond opening switches

By: Grekhov, I.V.; Mesyats, G.A.;

1999 / IEEE / 0-7803-5498-2

Description

This item was taken from the IEEE Conference ' Physical basis for high power semiconductor nanosecond opening switches ' The authors describe how, as a result of long-time research and development, a very high power, repetitive mode, semiconductor-based nanosecond technique is now commercially available. Drift step recovery diodes and inverse recover diodes are preferable as a base for generators with pulse rise times of 0.5-3 ns and pulse powers less than 50-80 MW. Silicon opening switch diodes are preferable at pulse rise times higher than 5 ns with any power and at any pulse rise time if the pulse power is higher than 100 MW.