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High-temperature continuous-wave operation of optically-pumped type-II W lasers from 3-6.3 /spl mu/m
By: Martinelli, R.U.; Lee, H.; Shanabrook, B.V.; Yang, M.J.; Meyer, J.R.; Aifer, E.H.; Connolly, J.C.; Stokes, D.W.; Vurgaftman, I.; Felix, C.L.; Bewley, W.W.; Olafsen, L.J.; Sugg, A.R.;
1999 / IEEE / 1-55752-595-1
This item was taken from the IEEE Conference ' High-temperature continuous-wave operation of optically-pumped type-II W lasers from 3-6.3 /spl mu/m ' Summary form only given. The development of semiconductor lasers capable of emitting at wavelengths longer than 3 /spl mu/m at high CW operating temperatures has proven to be quite challenging. To our knowledge, the best result reported previously was T/sub max/=225 K for a lead-salt device (/spl lambda/=4.2 /spl mu/m). One promising approach is the W laser, named for the shape of the conduction-band profile in its four-constituent type-II active region (e.g., InAs/GaInSb/InAs/AlSb). A recent optically-pumped W structure lased CW up to T/sub max/=220 K at /spl lambda/=3.4 /spl mu/m. We report CW operation of optically-pumped W lasers nearly to room temperature. The maximum wavelength for an interband III-V device has also been extended considerably.
Four-constituent Type-ii Active Region
Optically-pumped W Structure
Interband Iii-v Device
3 To 6.3 Mum
Cw Operating Temperatures
Optically-pumped Type-ii W Lasers
High-temperature Continuous-wave Operation
Molecular Beam Epitaxial Growth