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Substrate-thinned indium gallium arsenide/indium phosphide focal plane arrays for imaging from the visible through the near infrared
By: Lange, M.J.; Dries, J.C.; Forrest, S.R.; Sugg, A.R.; Cohen, M.J.; Vermaak, J.S.; Olsen, G.H.; Ettenberg, M.H.;
1999 / IEEE / 1-55752-595-1
Description
This item was taken from the IEEE Conference ' Substrate-thinned indium gallium arsenide/indium phosphide focal plane arrays for imaging from the visible through the near infrared ' Summary form only given. A high-performance camera, based on a 320/spl times/240 element array of indium gallium arsenide (In/sub .53/Ga/sub .47/As) photodiodes, has been specially fabricated to allow detection of light from the visible through the near infrared (0.5 /spl mu/m to 1.7 /spl mu/m). The overall structures of the starting epitaxial wafers and the final focal plane array are shown.
Related Topics
320/spl Times/240 Element Array
Indium Gallium Arsenide
In/sub .53/ga/sub .47/as Photodiodes
Overall Structure
Starting Epitaxial Wafers
Final Focal Plane Array
0.5 To 1.5 Mum
Indium Gallium Arsenide
Indium Phosphide
Optical Modulation
Optical Sensors
Substrates
Optical Pumping
Pin Photodiodes
Sensor Arrays
Silicon
Etching
Image Sensors
In/sub 0.53/ga/sub 0.47/as
Photodiodes
Focal Planes
Iii-v Semiconductors
Gallium Arsenide
Indium Compounds
Optical Arrays
Engineering
Substrate-thinned Focal Plane Arrays