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Noise characterization of MOSFETs for RF oscillator design

By: Aoki, H.; Shimasue, M.;

1999 / IEEE / 0-7803-5135-5


This item was taken from the IEEE Conference ' Noise characterization of MOSFETs for RF oscillator design ' This paper presents 1/f noise measurement and modeling techniques of sub-micron MOSFETs. The capacitor and inductor free biasing circuit enables quick bias tuning. A new MOSFET 1/f noise model has been developed to represent more accurate noise current spectrum density characteristics than existing models. The direct parameter extraction method for the new noise model does not use any corner frequencies. Phase noise of an RF oscillator was analyzed for verification.