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Noise characterization of MOSFETs for RF oscillator design
By: Aoki, H.; Shimasue, M.;
1999 / IEEE / 0-7803-5135-5
This item was taken from the IEEE Conference ' Noise characterization of MOSFETs for RF oscillator design ' This paper presents 1/f noise measurement and modeling techniques of sub-micron MOSFETs. The capacitor and inductor free biasing circuit enables quick bias tuning. A new MOSFET 1/f noise model has been developed to represent more accurate noise current spectrum density characteristics than existing models. The direct parameter extraction method for the new noise model does not use any corner frequencies. Phase noise of an RF oscillator was analyzed for verification.
Microwave Field Effect Transistors
Semiconductor Device Noise
Electric Noise Measurement
Semiconductor Device Measurement
Semiconductor Device Models
Rf Oscillator Phase Noise
Rf Oscillator Design
1/f Noise Measurement
1/f Noise Modeling
Noise Current Spectrum Density Characteristics
Direct Parameter Extraction Method
Uhf Field Effect Transistors