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Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing

By: Olsen, G.H.; Forrest, S.R.; Cohen, M.J.; Sudol, J.J.; Ettenberg, M.H.; Sugg, A.R.; Lange, M.J.;

1999 / IEEE / 0-7803-5562-8

Description

This item was taken from the IEEE Conference ' Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing ' Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a ""spin-on"" zinc diffusion technique whereby the source of zinc is ""spun-on"" much like a photoresist.