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Possibilities of the instant intense pulsed ion beams diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering

By: Ryzhkov, V.A.;

1997 / IEEE / 0-7803-4213-5

Description

This item was taken from the IEEE Conference ' Possibilities of the instant intense pulsed ion beams diagnostics based on pin-diode spectroscopy of the ion induced characteristic X-ray emission and Rutherford backscattering ' The present paper briefly discusses possibilities of the instant IPIB diagnostics based on the spectroscopy of the back-scattered/sputtered ions and X-rays generated due to the IPIB-solid interaction. The peculiarities of the RBS/PIXE diagnostic facilities are theoretically examined for short-pulsed ion implantation (""MUK-M""-accelerator with C/sup n+/ and Al/sup n+/ ion species, voltage U=100 kV, pulse duration /spl tau/=100 ns, flux per shot /spl Phi/=10/sup 12/ cm/sup -2/), ion beam surface treatment (""TEMP-1"", C/sup n+/ and H/sup +/, U=300 kV, /spl tau/=50 ns, /spl Phi/=10/sup 13/ cm/sup -2/) and film deposition (""TEMP-2"", C/sup n+/ and H/sup +/, U=450 kV, /spl tau/=100 ns, /spl Phi/=10/sup 14/ cm/sup -2/) processing. It is shown that the RBS/PIXE spectroscopy with crystal and magnet analyzers and pin-diode or linear CCD arrays, allows to obtain main IPIB parameters (ion species, energy distribution, flux) during the technological process, i.e. the instant IPIB diagnostics is possible.