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Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer
1997 / IEEE / 0-7803-3898-7
This item was taken from the IEEE Periodical ' Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer ' We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In/sub 0.53/Ga/sub 0.47/As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and structure variations, without degrading performance. A record high coupling efficiency of 45% from the TG laser to the integrated passive waveguide is obtained.
Monolithic Integrated Circuits
In/sub 0.53/ga/sub 0.47/as