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Low threshold InAsP/InGaP/InGaAsP/InP strain-compensated and compressively-strained 1.3 /spl mu/m lasers grown by GSMBE

By: Dries, J.C.; Gokhale, M.R.; Uenohara, H.; Forrest, S.R.;

1997 / IEEE / 0-7803-3898-7

Description

This item was taken from the IEEE Periodical ' Low threshold InAsP/InGaP/InGaAsP/InP strain-compensated and compressively-strained 1.3 /spl mu/m lasers grown by GSMBE ' We demonstrate, for the first time, strain-compensated InAsP/InGaP/InGaAsP/InP SCH-MQW lasers grown by Gas Source Molecular Beam Epitaxy (GSMBE). Also compressively strained InAsP/lnGaAsP/InP 1.3 /spl mu/m lasers with record low threshold current densities were obtained. The threshold current density of 210 A/cm/sup 2/ for compressively strained broad-area laser with 2.0-mm cavity was lower than the previously reported InAsP-based lasers grown by GSMBE.