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Current bunching in static field and novel input stage for microwave devices based on spindt type cathodes

By: Galdetskiy, A.V.;

1996 / IEEE / 0-7803-3594-5

Description

This item was taken from the IEEE Periodical ' Current bunching in static field and novel input stage for microwave devices based on spindt type cathodes ' Analytical one-dimensional theory is developed, describing field emission modulation and electron bunching in static and small RF fields. It takes exactly in account the influence of the static field and space charge and is valid for various current sources, providing unidirectional electron motion. On this base a new type of input stage for klystrode-type devices is considered which consists of an FEA triode with finite transit angle. The effective gain of this modulator is an order of magnitude greater than the gain of a conventional modulator.