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A new, in-line method for separating frontside/backside metalilic contamination from implantation

By: Sherry, J.; Todorov, S.; Eddy, R.; Lowell, J.;

1996 / IEEE / 0-7803-3289-X

Description

This item was taken from the IEEE Periodical ' A new, in-line method for separating frontside/backside metalilic contamination from implantation ' In this study, a new approach to answering the problem of ""directional"" metallic contamination contaminant introduction from the front or the back or both on a processed wafer is reported. Since dopant activation treatments diffuse metallic contaminants such as Fe throughout a CZ substrate, information as to the directional source of bulk contamination is often lost. However for problem identification, this directional component is critical. Below we propose a new method for solving this problem using surface photovoltage (SPV) which is totally passive and does not adversely effect the wafer or the implant.