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Vacuum arc deposition of TiN and TiO/sub x/ films on large metallic and dielectric surfaces

By: Kovsharov, N.F.; Koval, N.N.; Borisov, D.P.; Schanin, P.M.; Tolkachev, V.S.;

1996 / IEEE / 0-7803-2906-6

Description

This item was taken from the IEEE Periodical ' Vacuum arc deposition of TiN and TiO/sub x/ films on large metallic and dielectric surfaces ' Plasma-assisted vacuum deposition of TiN and TiO/sub x/ films is performed using four vacuum arc evaporators and four hot-cathode-arc plasma generators. Film deposition on substrates of total area 6 m/sup 2/, with the workpiece having dimensions of 1/spl times/1.6 m, is completed in one cycle. The arc parameters in the process of film deposition are typically as follows: the vacuum arc current and voltage are 100 A and 30 V, respectively, and the hot-cathode arc current and voltage are 20 A and 50 V, respectively. The deposition of a TiN film on a metal takes 50 min, while the TiN or TiO/sub x/ film deposition on a dielectric occurs within 20 min.