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Low temperature impurity-induced disordering of AlGaInAs/InP quantum wells for long wavelength optoelectronic applications
1995 / IEEE / 0-7803-2147-2
This item was taken from the IEEE Periodical ' Low temperature impurity-induced disordering of AlGaInAs/InP quantum wells for long wavelength optoelectronic applications ' We investigated impurity-induced disordering (IID) in compressively strained AlGaInAs multi quantum wells (MQWs) on InP substrate by Zn diffusion. Complete disordering of AlGaInAs MQW, enhanced by strain, was observed even at the low temperature of 400/spl deg/C. On the other hand, unstrained MQW was not completely disordered below 500/spl deg/C. The measured hole concentration of the Zn diffused layer at 400/spl deg/C was as low as 3/spl times/10/sup 18/ cm/sup -3/. The IID lasers were also fabricated and characterized. No significant optical loss was observed in these lasers.
Semiconductor Quantum Wells
Quantum Well Lasers
Compressively Strained Mqw
Long Wavelength Optoelectronic Application
Effective Bandgap Energy Change
1.3 To 1.5 Micron
Quantum Well Devices
Molecular Beam Epitaxial Growth
Photonic Band Gap