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Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs]

By: Allenspach, M.; Tastet, P.; Calvel, P.; Calvet, M.-C.; Mouret, I.; LaBel, K.A.; Schrimpf, R.D.; Galloway, K.F.; Wheatley, C.F.; Titus, J.L.;

1995 / IEEE / 0-7803-3093-5

Description

This item was taken from the IEEE Periodical ' Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs] ' The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity of power MOSFETs.