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High efficiency monolithic GaAs/Si tandem solar cells grown by MOCVD

By: Jimbo, T.; Soga, T.; Yang, M.-J.; Umeno, M.;

1994 / IEEE / 0-7803-1460-3

Description

This item was taken from the IEEE Periodical ' High efficiency monolithic GaAs/Si tandem solar cells grown by MOCVD ' A monolithic high-efficiency GaAs/Si cascade solar cell fabricated by MOCVD is demonstrated. It consists of the GaAs top cell and the Si bottom cell. Using a buffer layer of Al/sub 0.3/Ga/sub 0.7/As, the conversion efficiency of the GaAs top cell is decreased from 15.1% from 14.2%, but it makes the efficiency of the Si bottom cell increased from 4.3% to 5.3%. The theoretical analyses of the Si bottom cell are carried out. The suitable resistivity of p-Si substrate for the Si bottom cell is founded to be 10 /spl Omega//spl middot/cm, which corresponded with the experimental results. The total conversion efficiency of the GaAs/Si tandem solar cell is 19.5% (1 sun, AM0) which has been achieved in a three-terminal configuration.