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680 nm band high-power individually addressable two-beam lasers with low thermal interference

By: Mannoh, M.; Takamori, A.; Ohnaka, K.;

1994 / IEEE / 0-7803-2111-1

Description

This item was taken from the IEEE Periodical ' 680 nm band high-power individually addressable two-beam lasers with low thermal interference ' High-power operation (35 mW/spl times/2) at 70/spl deg/C in a 680 nm band individually addressable AlGaInP/GaInP 2-beam laser diode has been demonstrated for the first time. The 2-beam laser diode employs V-grooves for electrode separation and reduction of laser capacitance, and accurate junction-down bonding to silicon carbide (SiC) submount. Therefore, simultaneous high-power operation, high frequency response and high reliability are achieved.<>