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Studies of double-sided, double-metal silicon microstrip detectors

By: Alexander, J.P.; Bebek, C.J.; Smith, J.G.; Balest, R.; Miller, J.S.; Cowan, D.F.; Chan, S.; Chadha, M.; Akerib, D.; Sobolewski, Z.; Artuso, M.; Yamamoto, H.; Miller, L.H.; Henderson, S.; Cinabro, D.; Tajima, H.; Sperka, D.J.; Schmidt, D.M.; Qiao, C.; Nelson, T.K.; Nelson, H.N.; Kyre, S.; Korte, C.; Hale, D.L.; Morrison, R.J.; Gronberg, J.; Wurthwein, F.; Browder, T.E.; Dobbins, J.A.; Gray, S.G.; Honscheid, K.; Jones, C.D.; Katayama, N.; Katris, J.S.; Kim, P.C.; Selen, M.; Worden, H.M.;

1992 / IEEE / 0-7803-0884-0


This item was taken from the IEEE Periodical ' Studies of double-sided, double-metal silicon microstrip detectors ' Double-sided, double-layer silicon microstrip detectors for the CLEO-II vertex detector have been studied. The double-layer structure permits the transverse strips to be connected via longitudinal readout traces to preamplifiers located at the end of the detectors. The detectors are full-size AC coupled detectors with polysilicon bias resistors on the n-side and punch-through biasing on the p-side. The authors present measurements of detector static properties, including the extra capacitance due to the double-layer structure, as well as measurements of signal and noise.<>