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Polycrystalline-silicon thin-film transistor technology for low cost, high-power integrated circuits

By: Wheatley, C.F.; Nostrand, G.E.; Ipri, A.C.; Dolny, G.M.; Wodarczyk, P.J.;

1992 / IEEE / 0-7803-0817-4

Description

This item was taken from the IEEE Periodical ' Polycrystalline-silicon thin-film transistor technology for low cost, high-power integrated circuits ' The feasibility of fabricating power ICs by integrating CMOS logic and control elements formed from polycrystalline-silicon thin-film transistors (TFTs) on the field oxide of single-crystal, vertical-current flow, power devices is described. Complete, dielectric, isolation between the TFT control elements and the power output device is thus provided in a simple, low-cost process. The device and circuit characteristics of the integrated TFT/vertical power devices are described. Functional power ICs using this technology are demonstrated.<>