Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

High gain lateral heterojunction bipolar transistors and application to optoelectronic integration

By: Thornton, R.L.; Chung, H.F.; Mosby, W.J.;

1989 / IEEE / 0-7803-0817-4

Description

This item was taken from the IEEE Periodical ' High gain lateral heterojunction bipolar transistors and application to optoelectronic integration ' Refinements in the geometry of a novel AlGaAs lateral heterojunction bipolar transistor structure that have made it possible to greatly improve the DC characteristics of these devices are described. By reducing the base dimensions to 0.35 mu m and improving the abruptness of the grading at the base-emitter p-n junction, maximum current gains in excess of 600 have been achieved. Demonstration of these values of gain establishes the viability of this device architecture for making a wide variety of electronically functional circuits. The improvements have been realized with only a relatively small penalty in increased difficulty of device fabrication. In addition, the complete planarity of the fabrication process for these devices makes them very attractive for optoelectronic integration applications.<>