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Temperature Stability of AuGeNi Ohmic Contacts to GaAs
1987 / IEEE / 444704779
This item was taken from the IEEE Periodical ' Temperature Stability of AuGeNi Ohmic Contacts to GaAs ' To achieve reliable, thermally stable ohmic contacts to n-GaAs, surface preparation and thickness of the AuGeNi films must be properly chosen. In this work the contact resistance as a function of the alloying temperature cycle has been studied for different AuGeNi thickness and sputter cleaning conditions. In-situ X-ray photoemission spectroscopy (XPS) analysis of the sputter-cleaned GaAs-surface showed that the As