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X-Band Silicon Power Transistor
By: Han-Tzong Yuan; You-Sun Wu; Kruger, J.B.;
1975 / IEEE
Description
This item was taken from the IEEE Periodical ' X-Band Silicon Power Transistor ' A four cell silicon bipolar power transistor exhibiting 1.0 watts cw output power with 6 dB power gain and 30% collector efficiency at 8 GHz has been developed. The transistor has 1mu m metal contacts and 0.5 mu m emitter width. Direct electron-beam slice writing was applied to define the fine geometries.
Related Topics
X-band Silicon Power Transistor
Gain 6 Db
Frequency 8 Ghz
Power 1 W
Silicon
Power Transistors
Geometry
Power Generation
Frequency
Packaging
Microwave Transistors
Laboratories
Diodes
Bipolar Transistor Circuits
Four Cell Silicon Bipolar Power Transistor
Microwave Power Transistors
Power Bipolar Transistors
Engineering
Direct Electron-beam Slice Writing
