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Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes
By: Jin-Seong Lee; Jae-Sub Oh; Chung-Jin Kim; Sung-Jin Choi; Dong-Il Moon; Yang-Kyu Choi; Jin-Woo Han; Jeoung-Woo Kim; Young-Su Kim; Jee-Yeon Kim; Dong-Wook Lee; Dae-Won Hong; Yun-Chang Park; Gi-Sung Lee;
2011 / IEEE
This item was taken from the IEEE Periodical ' Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes ' A gate length of 25 nm and a silicon nanowire (SiNW) with a width of 6 nm and a height of 10 nm fully surrounded by a gate are demonstrated. A suspended SiNW, which is fully depleted, is fabricated on a bulk substrate by employing the deep reactive-ion etching process known as the Bosch process. The electrical characteristics and short-channel effects (SCEs) of the SiNW MOSFETs with all-around gates are presented. The fabricated devices show excellent immunity against SCEs despite their being built on a bulk substrate and having gate lengths scaled down to the 25-nm regime. Improved electrostatic characteristics that suppress the SCEs are shown when the dimension of the SiNW is reduced.
Short Channel Effects
Size 6 Nm
Size 10 Nm
Size 25 Nm
Silicon Nanowire (sinw)
All-around Gate (aag)
Deep Reactive-ion Etch
Short-channel Effects (sces)
Deep Reactive-ion Etching
All Plasma-etching Routes
Semiconductor Quantum Wires
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
All-around Gate Mosfet