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An Analytical Expression for Threshold Voltage of Polycrystalline-Silicon Thin-Film Transistors

By: Dapeng Zhou; Mingxiang Wang; Yan Zhou; Man Wong; Dongli Zhang;

2010 / IEEE

Description

This item was taken from the IEEE Periodical ' An Analytical Expression for Threshold Voltage of Polycrystalline-Silicon Thin-Film Transistors ' A physical-based analytical expression for the threshold voltage (Vth) of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) is proposed, which is based on our previously developed analytical on-state drain-current model. The proposed Vth formula includes not only the channel inversion but also the grain-boundary (GB) potential barrier modulation effect. Furthermore, the GB barrier modulation is the dominant factor for device Vth rather than the channel inversion. The calculated Vth values agree well with the experimentally extracted ones using a constant-current or second-derivative method. The applicability of the formula is demonstrated in both n- and p-type poly-Si TFTs processed in either high or low temperature.