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A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal
2010 / IEEE
This item was taken from the IEEE Periodical ' A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal ' A novel methodology for completely removing the silicon substrate of SOI devices for single-event effects testing is introduced and demonstrated using a 90 nm, 4 Mb SRAM test vehicle. Applications and significance are discussed.
Sram Test Vehicle
Single Event Effect Testing
Heavy Ion Irradiation
Pulsed Laser Irradiation
Cmos/soi Sram Substrate Removal
Single Event Upset
Silicon On Insulator Technology
Laser Beam Effects
Ion Beam Effects
Cmos Integrated Circuits