Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory

By: Jeoung Woo Kim; Yun Chang Park; Myeong Ho Song; Jae Sub Oh; Gi Sung Lee; Yang-Kyu Choi; Jin Soo Kim; Moon-Gyu Jang; Jin-Woo Han; Sung-Jin Choi; Kwang Hee Kim;

2009 / IEEE

Description

This item was taken from the IEEE Periodical ' High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory ' A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segregated Schottky contact at the source side can generate hot electrons, and it can be used to provide high injection efficiency at low voltage without any constraint on the choice of the proper gate and drain voltage. The DSSB FinFET SONOS device is therefore a promising candidate for nor-type flash memory with high-speed and low-power programming.