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High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory
By: Jeoung Woo Kim; Yun Chang Park; Myeong Ho Song; Jae Sub Oh; Gi Sung Lee; Yang-Kyu Choi; Jin Soo Kim; Moon-Gyu Jang; Jin-Woo Han; Sung-Jin Choi; Kwang Hee Kim;
2009 / IEEE
This item was taken from the IEEE Periodical ' High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory ' A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segregated Schottky contact at the source side can generate hot electrons, and it can be used to provide high injection efficiency at low voltage without any constraint on the choice of the proper gate and drain voltage. The DSSB FinFET SONOS device is therefore a promising candidate for nor-type flash memory with high-speed and low-power programming.
Nor-type Flash Memory
Decision Support Systems
Secondary Generated Hot Electron Injection
High Injection Efficiency
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas
Dopant-segregated Schottky Barrier