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Passivation Effects of Aluminum on Polycrystalline Silicon Thin-Film Transistor With Metal-Replaced Junctions

By: Dongli Zhang; Man Wong;

2007 / IEEE

Description

This item was taken from the IEEE Periodical ' Passivation Effects of Aluminum on Polycrystalline Silicon Thin-Film Transistor With Metal-Replaced Junctions ' Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher on-state current, and improved immunity against short-channel effects. These improvements are consistent with a measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel