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Polysilicon Thin Film-Transistors With Uniform and Reliable Performance Using Solution-Based Metal-Induced Crystallization

By: Bo Zhang; Hoi-Sing Kwok; Man Wong; Shuyun Zhao; Zhiguo Meng;

2007 / IEEE

Description

This item was taken from the IEEE Periodical ' Polysilicon Thin Film-Transistors With Uniform and Reliable Performance Using Solution-Based Metal-Induced Crystallization ' The authors studied electrical characteristics of p-channel polycrystalline silicon thin-film transistors (TFT) fabricated by solution-based metal-induced crystallization (SMIC). In particular, the effect of annealing conditions was systematically investigated. The current-voltage characteristics show that the performance of TFTs was dominated by the SMIC process rather than the annealing temperature up to 630 degC. All the devices exhibited good uniformity after annealing. The effects of gate stress and self-heating stress were also studied. The device performance was not affected by both stresses for all devices, p-channel SMIC poly-Si TFT has high performance, good uniformity, and satisfactory reliability with a process temperature < 600 degC