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Metal-replaced junction for reducing the junction parasitic resistance of a TFT

By: Man Wong; Dongli Zhang;

2006 / IEEE

Description

This item was taken from the IEEE Periodical ' Metal-replaced junction for reducing the junction parasitic resistance of a TFT ' Thin-film transistors (TFTs) with metal-replaced junctions (MERJs) have been fabricated and characterized. The junction parasitic resistance of a MERJ TFT is significantly reduced by partially replacing the semiconductor source and drain with a metal. The replacement process was executed at a low temperature of 400/spl deg/C with minimum added process complexity. Compared to a TFT with regular semiconductor source and drain junctions, a MERJ TFT was found to exhibit higher effective values of field-effect mobility and ON-state current.